TPN2010FNH,L1Q

Nambari ya Sehemu ya Mtengenezaji:	TPN2010FNH,L1Q
Mtengenezaji:	Toshiba Electronic Devices and Storage Corporation
Sehemu ya Maelezo:	MOSFET N-CH 250V 5.6A 8TSON
Laha za data:	TPN2010FNH,L1Q Laha za data
Kuongoza Hali ya Bure / Hali ya RoHS:	Uongozi Bila Malipo / Unaofuata RoHS
Hali ya Hisa:	Katika Hisa
Meli Kutoka:	Hong Kong
Njia ya Usafirishaji:	DHL/Fedex/TNT/UPS/EMS

TAMBUA: Toshiba Electronic Devices and Storage Corporation TPN2010FNH,L1Q inapatikana katika chipnets.com. Tunauza Sehemu Mpya na ya Asili pekee na tunatoa muda wa udhamini wa mwaka 1 pekee. Ikiwa ungependa kujua zaidi kuhusu bidhaa au kuomba bei bora zaidi, tafadhali wasiliana nasi bonyeza Gumzo la Mtandaoni au utume nukuu kwetu.

Vipengee vyote vya Elektroniki vitapakia kwa usalama sana kwa ulinzi wa antistatic wa ESD.

package

Vipimo

Aina	Maelezo
Mfululizo	U-MOSVIII-H
Kifurushi	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Hali ya Sehemu	Active
Aina ya FET	N-Channel
Teknolojia	MOSFET (Metal Oxide)
Futa kwa Chanzo cha Voltage (Vdss)	250 V
Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C	5.6A (Ta)
Voltage ya Kuendesha (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	198mOhm @ 2.8A, 10V
Vgs (th) (Max) @ Id	4V @ 200µA
Malipo ya Lango (Qg) (Max) @ Vgs	7 nC @ 10 V
Vgs (Upeo)	±20V
Uwezo wa Kuingiza (Ciss) (Max) @ Vds	600 pF @ 100 V
Makala ya FET	-
Utaftaji wa Nguvu (Upeo)	700mW (Ta), 39W (Tc)
Joto la Uendeshaji	150°C (TJ)
Aina ya Kuweka	Surface Mount
Kifurushi cha Kifaa cha muuzaji	8-TSON Advance (3.3x3.3)
Kifurushi / Kesi	8-PowerVDFN

KUNUNUA CHAGUO

Hali ya Hisa: 2244

Kiwango cha chini: 1

Kiasi	Bei ya Kitengo	Ext. Bei
Bei haipatikani, tafadhali RFQ

Hesabu ya mizigo

US $ 40 na FedEx.

Fika ndani ya siku 3-5

Express:(FEDEX, UPS, DHL, TNT)Usafirishaji bila malipo kwa 0.5kg ya kwanza kwa maagizo ya zaidi ya $150,Uzito uliozidi utatozwa kando

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Kipengee hiki kimeongezwa kwenye rukwama yako.